Numerical modelling of probability of inclusion of microplasma c participation of the deep centers in $p$--$n$--junction

V. K. Ionychev1, R. R. Kaderkaev2, S. M. Muryumin3, P. A. Shamanaev4

Annotation Influence of the deep centers on a statistical delay of breakdown of microplasma in $p$--$n$--junction is modelled. The numerical computation of the probability of microplasma inclusion in GaP p-n-junction has been made in the case of the charge carriers emission through the simple two-charged and also multicharged generation-recombination center. It is established that the change of the deep levels charges by means of partial reduction of reverse voltage in p-n-junction may result in some peculiarities concerning the distribution of the statistical delay of microplasma breakdown. The duration of breakdown delay changes. static delay of breakdown, deep centers, microplasma turn-on, carriers emission, charge conditions of center

1Associate Professor of the Department of Electronics and Nanoelectronics, Ogarev Mordovia State University, Saransk; microelektro@mail.ru.

2Postgraduate student of the Department of Technical Service Machines, Ogarev Mordovia State University, Saransk.

3Associate Professor of the Department Applied Mathematics, Differential Equations and Theoretical Mechanics, Ogarev Mordovia State University, Saransk; journal@svmo.ru.

4Associate Professor of the Department Applied Mathematics, Differential Equations and Theoretical Mechanics, Ogarev Mordovia State University, Saransk. korspa@yandex.ru.

Citation: V. K. Ionychev, R. R. Kaderkaev, S. M. Muryumin, P. A. Shamanaev, "[Numerical modelling of probability of inclusion of microplasma c participation of the deep centers in $p$--$n$--junction]", Zhurnal Srednevolzhskogo matematicheskogo obshchestva,17:4 (2015) 78–86 (In Russian)