Investigation of the kinetics of nonequilibrium carriers in semiconductors under periodic optical excitation.
E. V. Nikishin1, E. E. Peskova2
| Annotation | In this paper theoretical investigations of the mean value of non-equilibrium concentration of uncombined carriers in a semiconductor under the periodical optical excitation are carried out. Calculations are made for silicon doped with gold. The median concentration of free carriers depends on the frequency and shape of the excitation pulses. |
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| Keywords | the recombination mechanisms, the kinetics of photoconductivity, Si, Au, recombination centers, periodic excitation. |
1Associate professor of Experimental Physics Chair, Mordovian State University after N. P. Ogarev, Saransk; Nikishin57@mail.ru
2Assistant of Applied Mathematics, Differential equations and Theoretical mechanics Chair, Mordovian State University after N. P. Ogarev, Saransk; Lizanika@mail.ru.
Citation: E. V. Nikishin, E. E. Peskova, "[Investigation of the kinetics of nonequilibrium carriers in semiconductors under periodic optical excitation.]", Zhurnal Srednevolzhskogo matematicheskogo obshchestva,16:2 (2014) 85–89 (In Russian)
