The kinetics of photoconductivity under interband excitation with surface recombination
S. M. Muryumin1, A. E. Nikishina2, E. V. Nikishin3
| Annotation | We investigated the kinetics of photoresistor photoconductivity with deep foreign centers theoretically. Typical parameters of semiconductors $A^{2}B^{6}$ and $A^{3}B^{5}$ were used. We considered the influence of electric field and electrons and holes border diffusion to photosensitivity of photoresistor. |
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| Keywords | the kinetics of photoconductivity, recombination centers, lifetime of electrons and holes, $A^{2}B^{6}$ and $A^{3}B^{5}$, surface recombination. |
1Associate professor of Applied Mathematics Chair, Mordovian State University after N.P. Ogarev, Saransk
2Graduate student of Applied Mathematics Chair, Mordovian State University after N.P. Ogarev, Saransk; annikishina@yandex.ru
3Associate professor of Experimental Physics Chair, Mordovian State University after N.P. Ogarev, Saransk; nikishin57@mail.ru
Citation: S. M. Muryumin,A. E. Nikishina,E. V. Nikishin, "[The kinetics of photoconductivity under interband excitation with surface recombination]", Zhurnal Srednevolzhskogo matematicheskogo obshchestva,15:1 (2013) 112–120 (In Russian)
